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CGD65B200S2-T13

Part number CGD65B200S2-T13
Product classification Single FETs, MOSFETs
Manufacturer Cambridge GaN Devices
Description 650V GAN HEMT, 200MOHM, DFN5X6.
Encapsulation
Packing Tape & Reel (TR)
Quantity 4355
RoHS status YES
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Inventory:
Total number

Quantity

Price

Total price

1

$4.7775

$4.7775

10

$4.0110

$40.1100

100

$3.2445

$324.4500

500

$2.8875

$1,443.7500

1000

$2.4675

$2,467.5000

2000

$2.3205

$4,641.0000

5000

$2.2365

$11,182.5000

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Product parameters
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TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 2.75mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V
Similar models
CGD65R260B
聚能创芯-Cohenius
GaN功率器件

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